Trap Technology
We develop novel ion trap technology that supports quantum information tasks such as computing and sensing.
3D-Printed Ion Traps
In collaboration with Lawrence Livermore National Laboratories, UC Santa Barbara, and UC Riverside, we pioneered ion traps manufactured via two-photon-direct laser writing. This technology allows to print complex three-dimensional structures with sub-micrometer resolution. Theses 3D-printed ion traps combine the advantages, such as strong radial confinement, of traditionally machined 3D traps with on-chip miniaturization. The tight confinement eases ion cooling requirements and speeds up a variety of important operations. More importantly, the design freedom of these 3D printed traps allows the researcher to customize these traps to their needs in quantum information science, precision metrology, and mass spectrometry.
For more information see:
“3D-Printed Micro Ion Trap Technology for Scalable Quantum Information Processing”
S. Xu, X. Xia, Q. Yu, S. Khan, E. Megidish, B. You, B. Hemmerling, A. Jayich, J. Biener, H. Häffner
Nature 645, 362-368 (2025), arXiv:2310.00595.
Integrated Photonics
Scaling trapped-ion quantum processors requires delivering laser light to many ions simultaneously with high precision and stability. We pursue two complementary on-chip technologies for this control — one built around 3D-printed micro-optics, the other around grating couplers.
3D-Printed Micro-Optics
Together with Ming Wu’s group (UC Berkeley EECS) and collaborators at UCLA, we develop a hybrid 2D-3D photonic integrated circuit that pairs a planar waveguide lens with a 3D-printed mirror in a 4-F configuration. This design delivers diffraction-limited, multi-spot focusing across an unusually broad band (405-950 nm), covering nearly all wavelengths used in trapped-ion experiments while minimizing chromatic aberrations. The surface-electrode trap is patterned monolithically on top of the PIC, restricting light-dielectric interfacing to a metal-shielded vertical facet and mitigating photoinduced charging — a long-standing obstacle to scaling integrated-photonic ion traps. The Gen 1.0 device has been deployed in a UHV chamber and used to trap single 40Ca+ ions, with Gen 1.1 and Gen 2.0 designs targeting reduced surface scattering and aberrations. This effort is supported by the Challenge Institute for Quantum Computation (CIQC).
“Characterization of A Novel 2D-3D Photonic Integrated Circuit for Broadband, High-Efficiency Control of Trapped Ion Qubits”
D. Klawson, B. You, K. Sun, Q. Wu, Y. Zhi, L. Jiang, W. Ke, J. Lee, C.Y. Fan, A. Roy, S. Tang, J. Luo, B. Saarel, S. Xu, M. Bareian, M. C. Wu, H. Häffner
DAMOP 2025 (poster).
Bottom: top-down focal-plane images of the focused beam at eight wavelengths from 405 nm to 950 nm, demonstrating broadband, near diffraction-limited focusing covering nearly all wavelengths used in trapped-ion experiments.
Grating Couplers
In collaboration with UC Irvine, UC Davis, and UC Santa Barbara, we are also exploring focusing grating couplers embedded in a surface-electrode trap to individually address closely-spaced ions through openings in the trap electrodes. By tailoring the coupler geometry with adjoint optimization and controlling the interference of higher-order TE modes, the device delivers diffraction-limited focal spots with simulated crosstalk down to -60 dB at ion separations of 5-8 µm. The higher-order modes themselves provide a new handle for driving spin-motion-coupling transitions, suggesting alternative routes to quantum gates and simulations. This effort is supported by the UC Noyce Initiative.
“Individual trapped-ion addressing with adjoint-optimized multimode photonic circuits”
M. Momenzadeh, K. Sun, Q. Wu, B. You, Y.-L. Tang, H. Häffner, M. R. Shcherbakov
npj Nanophotonics 3, 3 (2026), arXiv:2505.08997.
Right: cross-section of the device stack — apodized SiN gratings beneath SiO2 and Au layers, with an ITO film shielding the ions from interface charging. Figure from Momenzadeh et al., npj Nanophotonics 3, 3 (2026).

